dss 3 515m document number: ds3181 9 rev. 4 - 2 1 of 7 www.diodes.com may 2015 ? diodes incorporated dss 3 515m 15v pnp low v ce( sat ) transistor features ? bv ceo > - 15 v ? i c = - 5 00ma high collector current ? i c m = - 1a peak pulse current ? p d = 1000 mw power dissipation ? low collector - emitter saturation voltage, v ce( sat ) ? 0. 60 mm 2 p ackage f ootprint, 1 3 times s maller than sot23 ? 0. 5 mm h eight p ackage m inimizing o ff - b oard p rofile ? complementary npn type dss2515m ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q1 01 standards for high reliability mechanical data ? case: x1 - dfn1006 - 3 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? nip dau . solderable per mil - std - 202, method 208 ? weight: 0.000 9 grams (approximate) ordering information (note 4 ) product compliance marking reel size (inches) tape width (mm) quantity per reel dss3515m - 7 aec - q101 tb 7 8 3,000 dss3515m - 7 b aec - q101 tb 7 8 10 ,000 notes: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diod es.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900pp m chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diod es.com. marking information dss3515m - 7 dss3515m - 7b bottom view top view device schemat ic x 1 - dfn1006 - 3 device symbol t b = product typ e marking code top view dot denotes collector side tb tb tb from date code 1527 (yyww), this changes to : top view bar denotes base and emitter side tb tb tb top view bar denotes base and emitter side tb tb tb c e b tb e4 c e b
dss 3 515m document number: ds3181 9 rev. 4 - 2 2 of 7 www.diodes.com may 2015 ? diodes incorporated dss 3 515m absolute maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit collector - base voltage v cbo - 15 v collector - emitter voltage v ceo - 15 v emitter - base voltage v ebo - 6 v collector current - continuous i c - 500 m a peak pulse collector current i cm - 1 a peak base current i b m - 100 ma thermal characteristics (@ t a = +25c , unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 4 00 mw (note 6) 1 000 thermal resistance, junction to ambient (note 5) r ? ja 310 ? ? jl 120 c/w ? j , t stg - 55 to +150 c esd ratings ( note 8) characteristic symbol value unit jedec class electrostatic discharge - human body model esd hbm 4,000 v 3a electrostatic discharge - machine model esd mm 200 v b notes: 5. for the device mounted on minimum recommended pad layout 1oz copper that is on a single - sided 1.6mm fr4 pcb; device is measured under still air conditions whilst operating in steady state condition. the entire exposed collector pad is attached to the heatsink. 6. same as note 5, except the exposed collector pad is mo unted on 25mm x 25mm 2oz copper. 7. thermal resistance from junction to solder - point (on the exposed collector pad). 8. refer to jedec specification jesd22 - a114 and jesd22 - a115.
dss 3 515m document number: ds3181 9 rev. 4 - 2 3 of 7 www.diodes.com may 2015 ? diodes incorporated dss 3 515m thermal characteristics 0.000001 0.0001 0.01 1 100 10,000 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) fig. 1 transient thermal resistance r (t) = r(t) * r ? ? ja ja r = 310c/w ? ja duty cycle, d = t1/ t2 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse 1,000 1e-06 0.0001 0.01 1 100 10,000 100 10 1 0.1 t1, pulse duration time (sec) fig. 2 single pulse maximum power dissipation p , p e a k t r a n s i e n t p o i w e r ( w ) ( p k ) single pulse r = 310c/w ? ja r = r * r ? ? ja(t) (t) ja t - t = p * r j a ja(t) ?
dss 3 515m document number: ds3181 9 rev. 4 - 2 4 of 7 www.diodes.com may 2015 ? diodes incorporated dss 3 515m ele ctrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics collector - base breakdown voltage b v cbo - 15 ? ? c = - 100 a, i e = 0 collector - emitter breakdown voltage (note 9 ) b v ceo - 15 ? ? c = - 10ma, i b = 0 emitter - base breakdown voltage b v ebo - 6 ? ? e = - 100 a, i c = 0 collector cutoff current i cbo ? ? v cb = - 15 v, i e = 0 v cb = - 15 v, i e = 0, t a = + 150 c emitter cutoff current i ebo ? ? eb = - 5v, i c = 0 on characteristics (note 9 ) dc current gain h fe 200 150 90 ? ? ? ? ? ? ? ? ? ce = - 2 v, i c = - 1 0 ma v ce = - 2 v, i c = - 1 00 ma v ce = - 2 v, i c = - 500ma collector - emitter saturation vo ltage v ce( sat ) ? ? ? ? ? ? ? ? - 25 - 150 - 250 mv i c = - 1 0ma, i b = - 0.5 ma i c = - 2 00ma, i b = - 10 ma i c = - 500m a, i b = - 50ma collector - emitter saturation resistance r ce( sat ) ? ? ? c = - 500m a, i b = - 5 0ma base - emitter saturation voltage v be( sat ) ? ? c = - 500m a, i b = - 50 ma base - emitter turn on voltage v be( on ) ? ? ce = - 2 v, i c = - 1 00m a small signal characteristics output capacitance c obo ? ? cb = - 10v, f = 1.0mhz current gain - bandwidth product f t 100 340 ? ce = - 5 v, i c = - 10 0ma, f = 100mhz note: 9. measured under pulsed conditions. pulse width 300s. duty cycle 2%.
dss 3 515m document number: ds3181 9 rev. 4 - 2 5 of 7 www.diodes.com may 2015 ? diodes incorporated dss 3 515m typical electrical characteristics (@ t a = +25c, unless otherwise specified.) 0 0.20 0.40 0.60 0.80 1.00 0 1 2 3 4 5 -v , collector-emitter voltage (v) ce fig. 4 typical collector current vs. collector-emitter voltage - i , c o l l e c t o r c u r r e n t ( a ) c i = -1ma b i = -2ma b i = -3ma b i = -4ma b i = -5ma b 1 10 100 1,000 -i , collector current (ma) c fig. 5 typical dc current gain vs. collector current 0 100 200 300 400 500 600 700 800 h , d c c u r r e n t g a i n f e t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 1 10 100 1,000 -i , collector current (ma) c fig. 6 typical collector-emitter saturation voltage vs. collector current 0.01 0.1 1 - v , c o l l e c t o r - e m i t t e r s a t u r a t i o n c e ( s a t ) v o l t a g e ( v ) t = -55c a i /i = 10 cb t = 25c a t = 85c a t = 125c a t = 150c a 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 7 typical base-emitter saturation voltage vs. collector current - v , b a s e - e m i t t e r s a t u r a t i o n v o l t a g e ( v ) b e ( s a t ) i = 10 cb /i t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 8 typical base-emitter turn-on voltage vs. collector current - v , b a s e - e m i t t e r t u r n - o n v o l t a g e ( v ) b e ( o n ) v = -2v ce t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 0.1 1 10 100 0.1 1 10 100 1,000 -i , collector current (ma) c fig. 9 typical collector-emitter saturation resistance vs. collector current - r , c o l l e c t o r - e m i t t e r s a t u r a t i o n r e s i s t a n c e c e ( s a t ) ( ) ? t = -55c a i /i = 20 cb t = 25c a t = 85c a t = 125c a t = 150c a
dss 3 515m document number: ds3181 9 rev. 4 - 2 6 of 7 www.diodes.com may 2015 ? diodes incorporated dss 3 515m package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the l atest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. x1 - dfn1006 - 3 dim min max typ a 0.47 0.53 0.50 a1 0 .00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 d 0.95 1.075 1.00 e 0.55 0.675 0.60 e - - 0.35 l1 0.20 0.30 0.25 l2 0.20 0.30 0.25 l3 - - 0.40 z 0.02 0.08 0.05 all dimensions i n mm dimensions value (in mm) c 0.7 0 g1 0.3 0 g2 0.2 0 x 0. 40 x1 1.10 y 0. 25 y1 0.7 0 l3 l1 l2 e b d e a z b2 a1 seating plane pin #1 id c y1 x1 x g2 y g1
dss 3 515m document number: ds3181 9 rev. 4 - 2 7 of 7 www.diodes.com may 2015 ? diodes incorporated dss 3 515m important notice diodes incorporated makes no warra nty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorpor ated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not wa rrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees a rising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. pro duct names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this d ocument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approv al of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when prope rly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems , notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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